2D Born–Infeld electrostatic fields
نویسندگان
چکیده
منابع مشابه
Numerical treatment of rounded and sharp corners in the modeling of 2D electrostatic fields
This work deals with numerical techniques to compute electrostatic fields in devices with rounded corners in 2D situations. The approach leads to the solution of two problems: one on the device where rounded corners are replaced by sharp corners and the other on an unbounded domain representing the shape of the rounded corner after an appropriate rescaling. Both problems are solved using differ...
متن کاملElectrostatic Approximation of Vector Fields
This paper provides expressions for the boundary potential that provides the best electrostatic potential approximation of a given Lvector field on a nice bounded region in R The permittivity of the region is assumed to be known and the potential is required to be zero on the conducting part of the boundary. The boundary potential is found by solving the minimization conditions and using a spec...
متن کاملDesigning 2D Vector Fields
We introduce a scheme of control polygons to design topological skeletons for vector fields of arbitrary topology. Based on this we construct piecewise linear vector fields of exactly the topology specified by the control polygons. This way a controlled construction of vector fields of any topology is possible. Finally we apply this method for topology-preserving compression of vector fields co...
متن کاملParallel Microassembly with Electrostatic Force Fields
Assembly is a fundamental issue in the volume production of products that include microscopic (submillimeter) parts. These parts are often fabricated in parallel at high density but must then be assembled into patterns with lower spatial density. In this paper we propose a new approach to microassembly using 1) ultrasonic vibration to eliminate friction and adhesion, and 2) electrostatic forces...
متن کاملEmission of Qd in Electrostatic Fields
The paper presents the wave functions ψ, probability functions ψψ* and the ground states energy of a nanostructure consisting of a Si QD embedded in SiO2 dielectric medium, which is under bias of varying electrostatic field. Abrupt displacement of the peak of ψψ* at a certain field value is elucidated as the QD emission. The field distribution and the characteristics of the nanostructure quantu...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physics Letters A
سال: 2004
ISSN: 0375-9601
DOI: 10.1016/j.physleta.2004.03.039